TY - JOUR
T1 - Improved electroluminescence of InAs quantum dots with strain reducing layer
AU - Yeh, Nien Tze
AU - Nee, Tzer En
AU - Chyi, Jen Inn
AU - Chia, Chih Ta
AU - Hsu, Tzu Min
AU - Huang, Chien Chi
N1 - Funding Information:
The support from the MBE laboratory of the Center for Optical Sciences at National Central University is acknowledged. This work was supported by the National Science Council of ROC under Contract No. NSC 89-2215-E-008-025.
PY - 2001/7
Y1 - 2001/7
N2 - The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.
AB - The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.
KW - A3. Molecular beam epitaxy
KW - A3. Quantum dots
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U2 - 10.1016/S0022-0248(01)00985-X
DO - 10.1016/S0022-0248(01)00985-X
M3 - Conference article
AN - SCOPUS:0035399294
SN - 0022-0248
VL - 227-228
SP - 1044
EP - 1048
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - 11th International Conference on Molecular Beam Epitaxy
Y2 - 11 September 2000 through 15 September 2000
ER -