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Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect

  • Ming Huei Lin
  • , Yi Jia Shih
  • , Chien Liu
  • , Yu Chien Chiu
  • , Chia Chi Fan
  • , Guan Lin Liou
  • , Chun Hu Cheng*
  • , Chun Yen Chang
  • *此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

This work demonstrates a novel multi-stacking PNPN channel structure for nanowire junctionless transistor. With the multi-PNPN channel structure, the design of multi-stacking PNPN junctions can promote the p-type channel layer to achieve fully depleted channel, accompanied with the excellent electrical performances on a steep subthreshold swing of 77 mV/dec and a high on/off current ratio of >107. Besides, utilizing with the constant-voltage-stress measurement, the multi-PNPN channel junctionless FETs with a robust stress reliability was demonstrated.

原文英語
主出版物標題2017 Silicon Nanoelectronics Workshop, SNW 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面47-48
頁數2
ISBN(電子)9784863486478
DOIs
出版狀態已發佈 - 2017 12月 29
事件22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, 日本
持續時間: 2017 6月 42017 6月 5

出版系列

名字2017 Silicon Nanoelectronics Workshop, SNW 2017
2017-January

其他

其他22nd Silicon Nanoelectronics Workshop, SNW 2017
國家/地區日本
城市Kyoto
期間2017/06/042017/06/05

ASJC Scopus subject areas

  • 電氣與電子工程
  • 電子、光磁材料

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