Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zhi Wei Zheng; Chun Hu Cheng; Kun I. Chou; Ming Liu; Albert Chin

doi:10.1063/1.4772003

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zhi Wei Zheng, Chun Hu Cheng, Kun I. Chou, Ming Liu, Albert Chin^*

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeO_x/TiO_y/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

原文	英語
文章編號	243507
期刊	Applied Physics Letters
卷	101
發行號	24
DOIs	https://doi.org/10.1063/1.4772003
出版狀態	已發佈 - 2012 12月 10

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.4772003

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abstract = "Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.",

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AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Chou, Kun I.

AU - Liu, Ming

AU - Chin, Albert

PY - 2012/12/10

Y1 - 2012/12/10

N2 - Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

AB - Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

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Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

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