Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zhi Wei Zheng, Chun Hu Cheng, Kun I. Chou, Ming Liu, Albert Chin

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

摘要

Narrow current distribution, good endurance, and low 28μW switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application.

原文英語
文章編號243507
期刊Applied Physics Letters
101
發行號24
DOIs
出版狀態已發佈 - 2012 十二月 10

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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