Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

INIS

• implementation 100%
• hafnium oxides 100%
• doped materials 100%
• capacitance 100%
• field effect transistors 100%
• transistors 66%
• performance 33%
• applications 33%
• engineering 33%
• oxygen 33%
• scaling 33%
• voltage 33%
• hysteresis 33%
• vacancies 33%
• orthorhombic lattices 33%
• phase transformations 33%
• thickness 33%
• reduction 33%
• monoclinic lattices 33%

Material Science

• Oxide 100%
• Capacitance 100%
• Field Effect Transistor 100%
• Hafnium 100%
• Doping (Additives) 100%
• Transistor 66%
• Oxygen Vacancy 33%