@article{62cc788a68c147f5bfffb7a5f18a121f,
title = "Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor",
abstract = "For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.",
keywords = "Dopant free, ferroelectric, hafnium oxide, negative capacitance (NC) transistor, orthorhombic",
author = "Cheng, {Chun Hu} and Fan, {Chia Chi} and Tu, {Chun Yuan} and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen}",
note = "Funding Information: Manuscript received October 16, 2018; accepted November 9, 2018. Date of publication November 22, 2018; date of current version December 24, 2018. This work was supported by the Ministry of Science and Technology, R.O.C., through grant MOST NSC 106-2628-E-003-001-MY2. The review of this brief was arranged by Editor Y. Chauhan. (Corresponding author: Chun-Hu Cheng.) C.-H. Cheng is with the Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan (e-mail: chcheng@ntnu.edu.tw). Funding Information: This work was supported by the Ministry of Science and Technology, R.O.C., through grant MOST NSC 106-2628-E-003- 001-MY2. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2019",
month = jan,
doi = "10.1109/TED.2018.2881099",
language = "English",
volume = "66",
pages = "825--828",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}