Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun Hu Cheng, Chia Chi Fan, Chun Yuan Tu, Hsiao Hsuan Hsu, Chun Yen Chang

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

For the first time, we successfully demonstrated the dopant-free HfO 2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

原文英語
文章編號8543493
頁(從 - 到)825-828
頁數4
期刊IEEE Transactions on Electron Devices
66
發行號1
DOIs
出版狀態已發佈 - 2019 一月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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