Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun Hu Cheng*, Ming Huei Lin, Hsin Yu Chen, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang

*此作品的通信作者

研究成果: 雜誌貢獻通訊期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

原文英語
文章編號1800573
期刊Physica Status Solidi - Rapid Research Letters
13
發行號5
DOIs
出版狀態已發佈 - 2019 五月

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學

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