Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun Hu Cheng, Ming Huei Lin, Hsin Yu Chen, Chia Chi Fan, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang

研究成果: 雜誌貢獻通訊期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf 1−x Zr x O 2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40 mV/decade, a low off-state leakage current of 190 fA μm −1 , and a large on/off current ratio of >10 7 can be simultaneously achieved in optimized negative capacitance Hf 1−x Zr x O 2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf 1−x Zr x O 2 . Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

原文英語
文章編號1800573
期刊Physica Status Solidi - Rapid Research Letters
13
發行號5
DOIs
出版狀態已發佈 - 2019 五月

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學

指紋

深入研究「Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors」主題。共同形成了獨特的指紋。

引用此