@inproceedings{453f1bfa66ea42d1816e9c33a4f10906,
title = "Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs",
abstract = "In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.",
keywords = "Contact-etch-stop-layer (CESL), hot carrier reliability, SiGe channel",
author = "Hsu, {H. W.} and Huang, {H. S.} and Chen, {S. Y.} and Wang, {M. C.} and Li, {K. C.} and Lin, {K. C.} and Liu, {C. H.}",
year = "2013",
doi = "10.1109/INEC.2013.6465962",
language = "English",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "89--90",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}