Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

H. W. Hsu*, H. S. Huang, S. Y. Chen, M. C. Wang, K. C. Li, K. C. Lin, C. H. Liu

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.

原文英語
主出版物標題Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
頁面89-90
頁數2
DOIs
出版狀態已發佈 - 2013
事件2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, 新加坡
持續時間: 2013 一月 22013 一月 4

出版系列

名字Proceedings - Winter Simulation Conference
ISSN(列印)0891-7736

其他

其他2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
國家/地區新加坡
城市Singapore
期間2013/01/022013/01/04

ASJC Scopus subject areas

  • 軟體
  • 建模與模擬
  • 電腦科學應用

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