Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

H. W. Hsu, H. S. Huang, S. Y. Chen, M. C. Wang, K. C. Li, K. C. Lin, Chuan-Hsi Liu

研究成果: 書貢獻/報告類型會議貢獻

摘要

In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.

原文英語
主出版物標題Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
頁面89-90
頁數2
DOIs
出版狀態已發佈 - 2013 三月 13
事件2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, 新加坡
持續時間: 2013 一月 22013 一月 4

出版系列

名字Proceedings - Winter Simulation Conference
ISSN(列印)0891-7736

其他

其他2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
國家新加坡
城市Singapore
期間13/1/213/1/4

ASJC Scopus subject areas

  • Software
  • Modelling and Simulation
  • Computer Science Applications

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  • 引用此

    Hsu, H. W., Huang, H. S., Chen, S. Y., Wang, M. C., Li, K. C., Lin, K. C., & Liu, C-H. (2013). Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs. 於 Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 (頁 89-90). [6465962] (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6465962