Impact of self-complementary resistance switch induced by over-Reset energy on the memory reliability of hafnium oxide based resistive random access memory

Heng Yuan Lee, Yu Sheng Chen, Pang Shiu Chen*, Chen Han Tsai, Pei Yi Gu, Tai Yuan Wu, Kan Hseuh Tsai, Shakh Ziaur Rahaman, Frederick Chen, Ming Jing Tsai, Ming Hung Lee, Tzu Kun Ku

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

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Physics & Astronomy

Engineering & Materials Science