Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun Yu Lin; Pin Hsin Chang; Rong Kun Chang

doi:10.1109/TDMR.2015.2496364

Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun Yu Lin, Pin Hsin Chang, Rong Kun Chang

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.

原文	英語
文章編號	7312970
頁（從 - 到）	633-636
頁數	4
期刊	IEEE Transactions on Device and Materials Reliability
卷	15
發行號	4
DOIs	https://doi.org/10.1109/TDMR.2015.2496364
出版狀態	已發佈 - 2015 12月

ASJC Scopus subject areas

電子、光磁材料
安全、風險、可靠性和品質
電氣與電子工程

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10.1109/TDMR.2015.2496364

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abstract = "The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.",

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KW - Electrostatic discharge (ESD)

KW - MOSFET

KW - layout

KW - pickup

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Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

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