@article{bacc66e38c7140e8a767537ba84d9794,
title = "Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process",
abstract = "The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.",
keywords = "Electrostatic discharge (ESD), MOSFET, layout, pickup",
author = "Chun-Yu Lin and Chang, {Pin Hsin} and Chang, {Rong Kun}",
note = "Funding Information: This work was supported in part by Global Unichip Corporation, Taiwan, and in part by the Ministry of Science and Technology, Taiwan, under Contracts MOST 104-2220-E-003-001 and MOST 103-2221-E-009-197-MY2. The authors would like to thank Prof. Ming-Dou Ker, National Chiao Tung University, Taiwan, and Mr. Wen-Tai Wang, Global Unichip Corporation, Taiwan, for their great help during design and measurement. Publisher Copyright: {\textcopyright} 2015 IEEE.",
year = "2015",
month = dec,
doi = "10.1109/TDMR.2015.2496364",
language = "English",
volume = "15",
pages = "633--636",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}