摘要
The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.
| 原文 | 英語 |
|---|---|
| 文章編號 | 7312970 |
| 頁（從 - 到） | 633-636 |
| 頁數 | 4 |
| 期刊 | IEEE Transactions on Device and Materials Reliability |
| 卷 | 15 |
| 發行號 | 4 |
| DOIs | |
| 出版狀態 | 已發佈 - 2015 十二月 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering
指紋 深入研究「Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process」主題。共同形成了獨特的指紋。
引用此
Lin, C-Y., Chang, P. H., & Chang, R. K. (2015). Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process. IEEE Transactions on Device and Materials Reliability, 15(4), 633-636. [7312970]. https://doi.org/10.1109/TDMR.2015.2496364