Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun-Yu Lin; Pin Hsin Chang; Rong Kun Chang

doi:10.1109/TDMR.2015.2496364

Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun-Yu Lin, Pin Hsin Chang, Rong Kun Chang

電機工程學系

研究成果: 雜誌貢獻 › 文章 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.

原文	英語
文章編號	7312970
頁（從 - 到）	633-636
頁數	4
期刊	IEEE Transactions on Device and Materials Reliability
卷	15
發行號	4
DOIs	https://doi.org/10.1109/TDMR.2015.2496364
出版狀態	已發佈 - 2015 十二月 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

存取文件

10.1109/TDMR.2015.2496364

指紋深入研究「Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process」主題。共同形成了獨特的指紋。

引用此

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