Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process

Chun-Yu Lin, Pin Hsin Chang, Rong Kun Chang

研究成果: 雜誌貢獻文章

2 引文 (Scopus)

摘要

The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high-k/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.

原文英語
文章編號7312970
頁(從 - 到)633-636
頁數4
期刊IEEE Transactions on Device and Materials Reliability
15
發行號4
DOIs
出版狀態已發佈 - 2015 十二月 1

指紋

Electrostatic discharge
Pickups
Metals
Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

引用此文

Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High-k/Metal Gate CMOS Process. / Lin, Chun-Yu; Chang, Pin Hsin; Chang, Rong Kun.

於: IEEE Transactions on Device and Materials Reliability, 卷 15, 編號 4, 7312970, 01.12.2015, p. 633-636.

研究成果: 雜誌貢獻文章

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