Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

H. W. Chen, Chuan-Hsi Liu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating HfSiON dielectrics with different compositions have been fabricated using atomic layer deposition (ALD) and their positive bias temperature instability (PBTI) reliability has also been investigated. The experimental results indicate that the oxide trapped charge (Not) dominates the PBTI degradation process, and after PBTI stress the increment of oxide trapped charges (ΔNot) is about 2-3 orders of magnitude greater than the generation of interface traps (ΔNit). Moreover, higher Hf concentration results in more pre-existing traps but slower trap creation rate. The charge pumping technique has been utilized to characterize the interfacial parameters, ΔNit, ΔNot, and ΔDit (the generation of the density of interface trap per energy and area).

原文英語
頁(從 - 到)614-617
頁數4
期刊Microelectronics Reliability
50
發行號5
DOIs
出版狀態已發佈 - 2010 五月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 安全、風險、可靠性和品質
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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