Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan; Yu Chien Chiu; Chien Liu; Guan Lin Liou; Wen Wei Lai; Yi Ru Chen; Chun Hu Cheng; Chun Yen Chang

doi:10.1109/EDTM.2017.7947573

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Guan Lin Liou, Wen Wei Lai, Yi Ru Chen, Chun Hu Cheng, Chun Yen Chang

機電工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

2 引文斯高帕斯（Scopus）

摘要

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO₂/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

原文	英語
主出版物標題	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	224-225
頁數	2
ISBN（電子）	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947573
出版狀態	已發佈 - 2017 6月 13
事件	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, 日本持續時間: 2017 2月 28 → 2017 3月 2

出版系列

名字	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

其他

其他	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
國家/地區	日本
城市	Toyama
期間	2017/02/28 → 2017/03/02

ASJC Scopus subject areas

硬體和架構
電氣與電子工程

存取文件

10.1109/EDTM.2017.7947573

其它文件與鏈接

引用此

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Cheng, C. H., & Chang, C. Y. (2017). Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. 於 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (頁 224-225). 文章 7947573 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947573

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. / Fan, Chia Chi; Chiu, Yu Chien; Liu, Chien 等.
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 224-225 7947573 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Fan, CC, Chiu, YC, Liu, C, Liou, GL, Lai, WW, Chen, YR, Cheng, CH & Chang, CY 2017, Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. 於 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947573, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 224-225, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, 日本, 2017/02/28. https://doi.org/10.1109/EDTM.2017.7947573

Fan CC, Chiu YC, Liu C, Liou GL, Lai WW, Chen YR 等. Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. 於 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 224-225. 7947573. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947573

Fan, Chia Chi ; Chiu, Yu Chien ; Liu, Chien 等. / Impact of ferroelectric domain switching in nonvolatile charge-trapping memory. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 頁 224-225 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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title = "Impact of ferroelectric domain switching in nonvolatile charge-trapping memory",

abstract = "In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.",

keywords = "Ferroelectric domain, HfZrO and HfON",

author = "Fan, {Chia Chi} and Chiu, {Yu Chien} and Chien Liu and Liou, {Guan Lin} and Lai, {Wen Wei} and Chen, {Yi Ru} and Cheng, {Chun Hu} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 ; Conference date: 28-02-2017 Through 02-03-2017",

year = "2017",

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AU - Fan, Chia Chi

AU - Chiu, Yu Chien

AU - Liu, Chien

AU - Liou, Guan Lin

AU - Lai, Wen Wei

AU - Chen, Yi Ru

AU - Cheng, Chun Hu

AU - Chang, Chun Yen

PY - 2017/6/13

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N2 - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

AB - In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

KW - Ferroelectric domain

KW - HfZrO and HfON

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PB - Institute of Electrical and Electronics Engineers Inc.

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Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

摘要

出版系列

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ASJC Scopus subject areas

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其它文件與鏈接

指紋

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