Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Chia Chi Fan, Yu Chien Chiu, Chien Liu, Guan Lin Liou, Wen Wei Lai, Yi Ru Chen, Chun Hu Cheng, Chun Yen Chang

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

In this work, we proposal a ferroelectric domain to enhance program/erase/read efficiency of conventional charge-trapping nonvolatile memory. The ferroelectric-domain-dominated HfZrO/HfON memory shows the better subthreshold characteristics than control charge-trapping structure (HfO2/HfON). Additionally, the memory speed with ferroelectric polarization (∼800ns) is more than three orders of magnitude faster than that of control trapping type.

原文英語
主出版物標題2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面224-225
頁數2
ISBN(電子)9781509046591
DOIs
出版狀態已發佈 - 2017 六月 13
事件2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, 日本
持續時間: 2017 二月 282017 三月 2

出版系列

名字2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

其他

其他2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
國家/地區日本
城市Toyama
期間2017/02/282017/03/02

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

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