Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

Yann Wen Lan; Linh Nam Nguyen; Shui Jin Lai; Ming Chou Lin; Chieh Hsiung Kuan; Chii Dong Chen

doi:10.1063/1.3619177

Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

Yann Wen Lan^*
, Linh Nam Nguyen
, Shui Jin Lai
, Ming Chou Lin
, Chieh Hsiung Kuan
, Chii Dong Chen

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.

原文	英語
文章編號	053104
期刊	Applied Physics Letters
卷	99
發行號	5
DOIs	https://doi.org/10.1063/1.3619177
出版狀態	已發佈 - 2011 8月 1
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3619177

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abstract = "A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.",

author = "Lan, \{Yann Wen\} and Nguyen, \{Linh Nam\} and Lai, \{Shui Jin\} and Lin, \{Ming Chou\} and Kuan, \{Chieh Hsiung\} and Chen, \{Chii Dong\}",

note = "Funding Information: We thank Aravind K, Yi-Lun Lee, Hsun-Chung Wu, Ying-Feng Huang, and Tzu-Hui Hsu for their assistance during the course of this work. This research was funded by the National Science Council of Taiwan under contract Nos. NSC 98-2112-M-001-023-MY3 and NSC 98-2627-M-001-002. Technical support from NanoCore, the Core Facilities for Nanoscience and Nanotechnology at Academia Sinica, is acknowledged.",

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AU - Kuan, Chieh Hsiung

AU - Chen, Chii Dong

N1 - Funding Information: We thank Aravind K, Yi-Lun Lee, Hsun-Chung Wu, Ying-Feng Huang, and Tzu-Hui Hsu for their assistance during the course of this work. This research was funded by the National Science Council of Taiwan under contract Nos. NSC 98-2112-M-001-023-MY3 and NSC 98-2627-M-001-002. Technical support from NanoCore, the Core Facilities for Nanoscience and Nanotechnology at Academia Sinica, is acknowledged.

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N2 - A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.

AB - A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.

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Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

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