Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate

Yann Wen Lan*, Linh Nam Nguyen, Shui Jin Lai, Ming Chou Lin, Chieh Hsiung Kuan, Chii Dong Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons.

原文英語
文章編號053104
期刊Applied Physics Letters
99
發行號5
DOIs
出版狀態已發佈 - 2011 八月 1
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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