Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

Z. F. Lou; C. Y. Liao; K. Y. Hsiang; Z. H. Li; S. H. Chang; T. C. Chen; M. H. Lee; J. Y. Lee

doi:10.1109/TED.2024.3480054

Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

Z. F. Lou
, C. Y. Liao
, K. Y. Hsiang
, Z. H. Li
, S. H. Chang
, T. C. Chen
, M. H. Lee^*
, J. Y. Lee

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (α_P = 0.07) and applicable conductance ratio (G_Max/G_min, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.

原文	英語
頁（從 - 到）	7437-7441
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	71
發行號	12
DOIs	https://doi.org/10.1109/TED.2024.3480054
出版狀態	已發佈 - 2024
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2024.3480054

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title = "Identical Pulse With Opposite Polarity Assistance Detrapping{\textemdash}Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse",

abstract = "A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (αP = 0.07) and applicable conductance ratio (GMax/Gmin, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.",

keywords = "Deep neural network (DNN), detrapping, ferroelectric FET (FeFET), synapse",

author = "Lou, \{Z. F.\} and Liao, \{C. Y.\} and Hsiang, \{K. Y.\} and Li, \{Z. H.\} and Chang, \{S. H.\} and Chen, \{T. C.\} and Lee, \{M. H.\} and Lee, \{J. Y.\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

doi = "10.1109/TED.2024.3480054",

language = "English",

volume = "71",

pages = "7437--7441",

journal = "IEEE Transactions on Electron Devices",

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T1 - Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

AU - Lou, Z. F.

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Li, Z. H.

AU - Chang, S. H.

AU - Chen, T. C.

AU - Lee, M. H.

AU - Lee, J. Y.

PY - 2024

Y1 - 2024

N2 - A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (αP = 0.07) and applicable conductance ratio (GMax/Gmin, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.

AB - A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity (αP = 0.07) and applicable conductance ratio (GMax/Gmin, 1G) > 16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.

KW - Deep neural network (DNN)

KW - detrapping

KW - ferroelectric FET (FeFET)

KW - synapse

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UR - https://www.scopus.com/pages/publications/85208232423#tab=citedBy

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DO - 10.1109/TED.2024.3480054

M3 - Article

AN - SCOPUS:85208232423

SN - 0018-9383

VL - 71

SP - 7437

EP - 7441

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Identical Pulse With Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

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