Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

C. Y. Liao, K. Y. Hsiang, S. H. Chang, S. H. Chiang, F. C. Hsieh, J. H. Liu, H. Liang, Z. F. Luo, C. Y. Lin, L. Y. Chen, V. P.H. Hu, M. H. Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds