Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

C. Y. Liao, K. Y. Hsiang, S. H. Chang, S. H. Chiang, F. C. Hsieh, J. H. Liu, H. Liang, Z. F. Luo, C. Y. Lin, L. Y. Chen, V. P.H. Hu, M. H. Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

This study systematically investigates identical pulse stimulation for potentiation machine learning to achieve a linear potentiation non-linearity (α P) equal to 1.25 and a high conductance ratio >1,000x with 5 nm-thick HfZrO2 (HZO) ferroelectric field effect transistors (FeFET). The trade-off characteristics between conductance ratio and linearity are exhibited. The higher remnant polarization (Pr) for memory window (MW) enhancement leads to an increasing conductance ratio but degrades the non-linearity of the training curve. The optimized stimulation condition for the identical pulse is performed with a pulse width of 50 ns and low access voltage for HZO thicknesses from 15 to 5 nm. These highlighted merits provide an opportunity to integrate emerging devices such as computing-in-memory (CIM) applications in the future.

原文英語
文章編號065015
期刊ECS Journal of Solid State Science and Technology
10
發行號6
DOIs
出版狀態已發佈 - 2021

ASJC Scopus subject areas

  • 電子、光磁材料

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