Hydrogenated amorphous silicon thin film transistor fabricated on glass and polyimide substrate at 200°C

Jung Jie Huang*, Min Hung Lee, Cheng Ju Tsai, Yung Hui Yeh

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

13 引文 斯高帕斯(Scopus)

摘要

The properties of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on both a glass substrate and on a colorless polyimide substrate were compared. Silicon nitride and hydrogenated amorphous silicon thin films were sequentially deposited at 200°C by plasma-enhanced chemical vapor deposition. The field-effect mobilities of the TFTs on glass and polyimide substrates were 0.35 and 0.42 cm2V-1 s-1, respectively. The field-effect mobility of TFTs on the polyimide substrate was higher than that on the glass substrate. This was caused by the reduced surface roughness of the silicon nitride and hydrogenated amorphous silicon films on the polyimide substrate. Both on glass and polyimide substrates, the subthreshold voltage swing was about 0.5 V/dec and an on/off current ratio over of 10 7 was achieved. The superior electrical characteristics resulted from the increased hydrogen content in the hydrogenated amorphous silicon film and a higher breakdown voltage of the silicon nitride film was obtained.

原文英語
頁(從 - 到)1295-1298
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
發行號3 B
DOIs
出版狀態已發佈 - 2007 三月 16
對外發佈

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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