@inproceedings{7cccc875d1cc42aeb6fd682e5babcf54,
title = "Hot carrier reliability of ald HfSiON gated MOSFETs with different compositions",
abstract = "Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions were fabricated and investigated for hot carrier reliability. The experimental results reveal that the channel hot carrier (CHC) stress is worse than drain avalanche hot carrier (DAHC) stress. Moreover, the experimental results also show that the increase of oxide trapped charges (ΔNot) depends on Hf content and is about one order of magnitude larger than that of interface traps (ΔNit) after CHC or DAHC stress. Finally, some important interfacial parameters, including ΔNit δDit and ΔNot, have also been characterized through the transconductance and subthrehsold swing (SS) methods.",
author = "Chen, {H. W.} and Chen, {S. Y.} and Lu, {C. C.} and Liu, {C. H.} and Chiu, {F. C.} and Hsieh, {Z. Y.} and Huang, {H. S.} and Cheng, {L. W.} and Lin, {C. T.} and Ma, {G. H.} and Sun, {S. W.}",
year = "2009",
doi = "10.1149/1.2981587",
language = "English",
isbn = "9781566776516",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "55--66",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",
note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",
}