@article{29ed676ae7b849fe8e9edcac507dc28e,
title = "Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs",
abstract = "In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.",
keywords = "Bulk-Si, Carrier mobility, Hot carrier (HC), Negative bias temperature instability (NBTI), Strained-Si",
author = "Liu, {Chuan Hsi} and Pan, {Tung Ming}",
note = "Funding Information: Manuscript received February 23, 2007; revised April 16, 2007. This work was supported by the National Science Council (NSC) of Taiwan, R.O.C., under Contract NSC-94-2115-E-182-009. The review of this brief was arranged by Editor M. J. Kumar. C.-H. Liu is with the Department of Electronics Engineering, Ming Chuan University, Taoyuan 333, Taiwan, R.O.C. (e-mail: liuch@mcu.edu.tw). T.-M. Pan is with the Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan, R.O.C. (e-mail: tmpan@mail.cgu.edu.tw). Digital Object Identifier 10.1109/TED.2007.898668",
year = "2007",
month = jul,
doi = "10.1109/TED.2007.898668",
language = "English",
volume = "54",
pages = "1799--1803",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}