Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Chuan Hsi Liu*, Tung Ming Pan

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this brief, the I-V characteristics and reliability degradations for both bulk-Si and strained-Si with relaxed SixGe1-x buffer devices have been fully characterized. The hot carrier degradation in strained-Si nMOSFET devices is more severe than that in bulk-Si ones, suggesting higher impact ionization current and higher defect densities in the SiO2/strained-Si interface. On the other hand, enhanced degradation of negative bias temperature instability is observed for strained-Si pMOSFET devices compared to control pMOSFET devices, indicating a large number of interface traps in the strained-Si device.

原文英語
頁(從 - 到)1799-1803
頁數5
期刊IEEE Transactions on Electron Devices
54
發行號7
DOIs
出版狀態已發佈 - 2007 七月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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