Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain

Bing Fong Hsieh, Shu Tong Chang, Ming Hong Lee*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.

原文英語
主出版物標題INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面606-607
頁數2
DOIs
出版狀態已發佈 - 2010
對外發佈
事件2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国
持續時間: 2010 一月 32010 一月 8

出版系列

名字INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

其他

其他2010 3rd International Nanoelectronics Conference, INEC 2010
國家/地區中国
城市Hongkong
期間2010/01/032010/01/08

ASJC Scopus subject areas

  • 電氣與電子工程

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