TY - GEN
T1 - Hole mobility in SiGe inversion layers
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
AU - Hsieh, Bing Fong
AU - Chang, Shu Tong
AU - Lee, Ming Hong
PY - 2010
Y1 - 2010
N2 - Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.
AB - Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.
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U2 - 10.1109/INEC.2010.5424749
DO - 10.1109/INEC.2010.5424749
M3 - Conference contribution
AN - SCOPUS:77951654328
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 606
EP - 607
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Y2 - 3 January 2010 through 8 January 2010
ER -