Hole mobility in SiGe inversion layers: Dependence on surface orientation, channel direction, and strain

Bing Fong Hsieh, Shu Tong Chang, Ming Hong Lee

    研究成果: 書貢獻/報告類型會議論文篇章

    摘要

    Hole mobility in high Ge-content SiGe inversion layer is measured and simulated by a split C-V method and a quantized k.p method, respectively. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6x6 k.p Schrodinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of SiGe on (001) Si wafers. The calibrated model reproduces our experimental channel mobility measurements for biaxial strain SiGe on (001), (111) and (110) substrates.

    原文英語
    主出版物標題INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
    頁面606-607
    頁數2
    DOIs
    出版狀態已發佈 - 2010 五月 5
    事件2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国
    持續時間: 2010 一月 32010 一月 8

    出版系列

    名字INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

    其他

    其他2010 3rd International Nanoelectronics Conference, INEC 2010
    國家中国
    城市Hongkong
    期間2010/01/032010/01/08

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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