Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

C. Y. Peng, F. Yuan, C. Y. Yu, P. S. Kuo, M. H. Lee, S. Maikap, C. H. Hsu, C. W. Liu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

26 引文 斯高帕斯(Scopus)

摘要

The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

原文英語
文章編號012114
期刊Applied Physics Letters
90
發行號1
DOIs
出版狀態已發佈 - 2007

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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