Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

C. Y. Peng; F. Yuan; C. Y. Yu; P. S. Kuo; M. H. Lee; S. Maikap; C. H. Hsu; C. W. Liu

doi:10.1063/1.2400394

Hole mobility enhancement of Si_0.2Ge_0.8 quantum well channel on Si

C. Y. Peng, F. Yuan, C. Y. Yu, P. S. Kuo, M. H. Lee, S. Maikap, C. H. Hsu, C. W. Liu^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

27 引文斯高帕斯（Scopus）

摘要

The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

原文	英語
文章編號	012114
期刊	Applied Physics Letters
卷	90
發行號	1
DOIs	https://doi.org/10.1063/1.2400394
出版狀態	已發佈 - 2007

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.2400394

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title = "Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si",

abstract = "The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.",

author = "Peng, {C. Y.} and F. Yuan and Yu, {C. Y.} and Kuo, {P. S.} and Lee, {M. H.} and S. Maikap and Hsu, {C. H.} and Liu, {C. W.}",

note = "Funding Information: The National Taiwan University group is supported by the National Science Council, Taiwan, under Contract No. NSC-94-2215-E-002-040, and Taiwan Semiconductor Manufacturing Company (TSMC).",

year = "2007",

doi = "10.1063/1.2400394",

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T1 - Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

AU - Peng, C. Y.

AU - Yuan, F.

AU - Yu, C. Y.

AU - Kuo, P. S.

AU - Lee, M. H.

AU - Maikap, S.

AU - Hsu, C. H.

AU - Liu, C. W.

N1 - Funding Information: The National Taiwan University group is supported by the National Science Council, Taiwan, under Contract No. NSC-94-2215-E-002-040, and Taiwan Semiconductor Manufacturing Company (TSMC).

PY - 2007

Y1 - 2007

N2 - The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

AB - The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

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Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

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Hole mobility enhancement of Si_0.2Ge_0.8 quantum well channel on Si