Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C. H. Cheng; P. C. Chen; Y. H. Wu; M. J. Wu; F. S. Yeh; Albert Chin

doi:10.1016/j.sse.2012.03.005

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C. H. Cheng^*
, P. C. Chen
, Y. H. Wu
, M. J. Wu
, F. S. Yeh
, Albert Chin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

15 引文斯高帕斯（Scopus）

摘要

Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 ⁶ cycling endurance are achieved in Ni/GeO _x/Ta ₂O _5-yN _y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta ₂O _5- _yN _y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

原文	英語
頁（從 - 到）	60-63
頁數	4
期刊	Solid-State Electronics
卷	73
DOIs	https://doi.org/10.1016/j.sse.2012.03.005
出版狀態	已發佈 - 2012 7月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/j.sse.2012.03.005

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title = "Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide",

abstract = "Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.",

keywords = "GeO, Hopping conduction, RRAM, TaON, Uniformity",

author = "Cheng, \{C. H.\} and Chen, \{P. C.\} and Wu, \{Y. H.\} and Wu, \{M. J.\} and Yeh, \{F. S.\} and Albert Chin",

note = "Funding Information: The paper publication was supported by National Science Council of Taiwan.",

year = "2012",

month = jul,

doi = "10.1016/j.sse.2012.03.005",

language = "English",

volume = "73",

pages = "60--63",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Wu, Y. H.

AU - Wu, M. J.

AU - Yeh, F. S.

AU - Chin, Albert

N1 - Funding Information: The paper publication was supported by National Science Council of Taiwan.

PY - 2012/7

Y1 - 2012/7

N2 - Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

AB - Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

KW - GeO

KW - Hopping conduction

KW - RRAM

KW - TaON

KW - Uniformity

UR - https://www.scopus.com/pages/publications/84859934991

UR - https://www.scopus.com/pages/publications/84859934991#tab=citedBy

U2 - 10.1016/j.sse.2012.03.005

DO - 10.1016/j.sse.2012.03.005

M3 - Article

AN - SCOPUS:84859934991

SN - 0038-1101

VL - 73

SP - 60

EP - 63

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

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ASJC Scopus subject areas

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