Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C. H. Cheng, P. C. Chen, Y. H. Wu, M. J. Wu, F. S. Yeh, Albert Chin

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15 引文 斯高帕斯(Scopus)

摘要

Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 6 cycling endurance are achieved in Ni/GeO x/Ta 2O 5-yN y/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta 2O 5- yN y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

原文英語
頁(從 - 到)60-63
頁數4
期刊Solid-State Electronics
73
DOIs
出版狀態已發佈 - 2012 七月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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