Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

C. Y. Tsai; T. H. Lee; C. H. Cheng; Albert Chin; Hong Wang

doi:10.1063/1.3522890

Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

C. Y. Tsai, T. H. Lee, C. H. Cheng, Albert Chin, Hong Wang

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

We have fabricated the TaN- [SiO₂ - LaAlO₃] -ZrON- [LaAlO₃ - SiO₂] -Si charge-trapping flash device with highly scaled 3.6 nm equivalent- Si₃ N₄ -thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation.

原文	英語
文章編號	213504
期刊	Applied Physics Letters
卷	97
發行號	21
DOIs	https://doi.org/10.1063/1.3522890
出版狀態	已發佈 - 2010 11月 22
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3522890

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abstract = "We have fabricated the TaN- [SiO2 - LaAlO3] -ZrON- [LaAlO3 - SiO2] -Si charge-trapping flash device with highly scaled 3.6 nm equivalent- Si3 N4 -thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation.",

author = "Tsai, {C. Y.} and Lee, {T. H.} and Cheng, {C. H.} and Albert Chin and Hong Wang",

note = "Funding Information: The paper publication was supported by National Science Council of Taiwan under Project No. NSC99–2120–M-009–002",

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AU - Tsai, C. Y.

AU - Lee, T. H.

AU - Cheng, C. H.

AU - Chin, Albert

AU - Wang, Hong

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PY - 2010/11/22

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N2 - We have fabricated the TaN- [SiO2 - LaAlO3] -ZrON- [LaAlO3 - SiO2] -Si charge-trapping flash device with highly scaled 3.6 nm equivalent- Si3 N4 -thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation.

AB - We have fabricated the TaN- [SiO2 - LaAlO3] -ZrON- [LaAlO3 - SiO2] -Si charge-trapping flash device with highly scaled 3.6 nm equivalent- Si3 N4 -thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation.

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Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

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