We have fabricated the TaN- [SiO2 - LaAlO3] -ZrON- [LaAlO3 - SiO2] -Si charge-trapping flash device with highly scaled 3.6 nm equivalent- Si3 N4 -thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)