Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

C. Y. Tsai, T. H. Lee, C. H. Cheng, Albert Chin, Hong Wang

研究成果: 雜誌貢獻文章

13 引文 斯高帕斯(Scopus)

摘要

We have fabricated the TaN- [SiO2 - LaAlO3] -ZrON- [LaAlO3 - SiO2] -Si charge-trapping flash device with highly scaled 3.6 nm equivalent- Si3 N4 -thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 °C, under very fast 100 μs and low ±16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As+ implantation that was significantly better than those of control device without ion implantation.

原文英語
文章編號213504
期刊Applied Physics Letters
97
發行號21
DOIs
出版狀態已發佈 - 2010 十一月 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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