Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu; Sheng Huei Dai; Shu Fen Hu; Evans Chíng Sung Yang; Charles Ching Hsiang Hsu; Ya Chin King

doi:10.1109/TED.2005.860636

Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu^*
, Sheng Huei Dai
, Shu Fen Hu
, Evans Chíng Sung Yang
, Charles Ching Hsiang Hsu
, Ya Chin King

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

An AND-type split-gate Flash memory cell with a trench select gate and a buried n⁺ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F². Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

原文	英語
頁（從 - 到）	109-111
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	53
發行號	1
DOIs	https://doi.org/10.1109/TED.2005.860636
出版狀態	已發佈 - 2006 1月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2005.860636

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@article{29816f701d3a416e94ea3eeef98b61f0,

title = "Highly scalable ballistic injection AND-type (BiAND) flash memory",

abstract = "An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.",

keywords = "AND-type array, Ballistic, Flash memory, Split-gate flash",

author = "Wu, \{Meng Yi\} and Dai, \{Sheng Huei\} and Hu, \{Shu Fen\} and Yang, \{Evans Ch{\'i}ng Sung\} and Hsu, \{Charles Ching Hsiang\} and King, \{Ya Chin\}",

year = "2006",

month = jan,

doi = "10.1109/TED.2005.860636",

language = "English",

volume = "53",

pages = "109--111",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Highly scalable ballistic injection AND-type (BiAND) flash memory

AU - Wu, Meng Yi

AU - Dai, Sheng Huei

AU - Hu, Shu Fen

AU - Yang, Evans Chíng Sung

AU - Hsu, Charles Ching Hsiang

AU - King, Ya Chin

PY - 2006/1

Y1 - 2006/1

N2 - An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

AB - An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

KW - AND-type array

KW - Ballistic

KW - Flash memory

KW - Split-gate flash

UR - https://www.scopus.com/pages/publications/33947694327

UR - https://www.scopus.com/pages/publications/33947694327#tab=citedBy

U2 - 10.1109/TED.2005.860636

DO - 10.1109/TED.2005.860636

M3 - Article

AN - SCOPUS:33947694327

SN - 0018-9383

VL - 53

SP - 109

EP - 111

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Highly scalable ballistic injection AND-type (BiAND) flash memory

摘要

ASJC Scopus subject areas

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