Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng Yi Wu*, Sheng Huei Dai, Shu Fen Hu, Evans Chíng Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

An AND-type split-gate Flash memory cell with a trench select gate and a buried n+ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F2. Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration.

原文英語
頁(從 - 到)109-111
頁數3
期刊IEEE Transactions on Electron Devices
53
發行號1
DOIs
出版狀態已發佈 - 2006 一月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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