摘要
In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.
原文 | 英語 |
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頁(從 - 到) | 646-649 |
頁數 | 4 |
期刊 | Solid-State Electronics |
卷 | 54 |
發行號 | 6 |
DOIs | |
出版狀態 | 已發佈 - 2010 6月 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學
- 電氣與電子工程
- 材料化學