Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

C. H. Cheng*, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

原文英語
頁(從 - 到)646-649
頁數4
期刊Solid-State Electronics
54
發行號6
DOIs
出版狀態已發佈 - 2010 六月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Higher-κ titanium dioxide incorporating LaAlO<sub>3</sub> as dielectrics for MIM capacitors」主題。共同形成了獨特的指紋。

引用此