Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

C. H. Cheng; H. H. Hsu; P. C. Chen; B. H. Liou; Albert Chin; F. S. Yeh

doi:10.1016/j.sse.2010.01.024

Higher-κ titanium dioxide incorporating LaAlO₃ as dielectrics for MIM capacitors

C. H. Cheng^*, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

In this work, we studied a TiO₂ mixed LaAlO₃ dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm² and a low leakage current of 7.5 × 10^-7 A/cm² at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al₂O₃ doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO₂-based dielectrics with the introduction of Al₂O₃ might be favorable for the improved engineering of MIM capacitors.

原文	英語
頁（從 - 到）	646-649
頁數	4
期刊	Solid-State Electronics
卷	54
發行號	6
DOIs	https://doi.org/10.1016/j.sse.2010.01.024
出版狀態	已發佈 - 2010 6月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/j.sse.2010.01.024

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引用此

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title = "Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors",

abstract = "In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.",

keywords = "AlO, LaAlO, Metal-insulator-metal capacitor",

author = "Cheng, {C. H.} and Hsu, {H. H.} and Chen, {P. C.} and Liou, {B. H.} and Albert Chin and Yeh, {F. S.}",

year = "2010",

month = jun,

doi = "10.1016/j.sse.2010.01.024",

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journal = "Solid-State Electronics",

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T1 - Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

AU - Cheng, C. H.

AU - Hsu, H. H.

AU - Chen, P. C.

AU - Liou, B. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010/6

Y1 - 2010/6

N2 - In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

AB - In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

KW - AlO

KW - LaAlO

KW - Metal-insulator-metal capacitor

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Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

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ASJC Scopus subject areas

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Higher-κ titanium dioxide incorporating LaAlO₃ as dielectrics for MIM capacitors