High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment

Ching Lien Hsiao; Ting Wei Liu; Chien Ting Wu; Hsu Cheng Hsu; Geng Ming Hsu; Li Chyong Chen; Wen Yu Shiao; C. C. Yang; Andreas Gällström; Per Olof Holtz; Chia Chun Chen; Kuei Hsien Chen

doi:10.1063/1.2898214

High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment

Ching Lien Hsiao^*
, Ting Wei Liu
, Chien Ting Wu
, Hsu Cheng Hsu
, Geng Ming Hsu
, Li Chyong Chen
, Wen Yu Shiao
, C. C. Yang
, Andreas Gällström
, Per Olof Holtz
, Chia Chun Chen
, Kuei Hsien Chen

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

27 引文斯高帕斯（Scopus）

摘要

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

原文	英語
文章編號	111914
期刊	Applied Physics Letters
卷	92
發行號	11
DOIs	https://doi.org/10.1063/1.2898214
出版狀態	已發佈 - 2008

ASJC Scopus subject areas

物理與天文學（雜項）

存取文件

10.1063/1.2898214

其它文件與鏈接

引用此

@article{9942ffa261294fccbefcbb1a07a446c8,

title = "High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment",

abstract = "High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors.",

author = "Hsiao, \{Ching Lien\} and Liu, \{Ting Wei\} and Wu, \{Chien Ting\} and Hsu, \{Hsu Cheng\} and Hsu, \{Geng Ming\} and Chen, \{Li Chyong\} and Shiao, \{Wen Yu\} and Yang, \{C. C.\} and Andreas G{\"a}llstr{\"o}m and Holtz, \{Per Olof\} and Chen, \{Chia Chun\} and Chen, \{Kuei Hsien\}",

note = "Funding Information: The authors would like to thank Y. F. Chen of National Taiwan University for his fruitful discussion. This work was financially supported by Ministry of Education and National Science Council in Taiwan as well as the US AFOSR-AOARD. This work was also supported by grants from the Swedish Foundation for Strategic Research (SSF) and the Swedish Foundation for International Cooperation in Research and Higher Education (STINT).",

year = "2008",

doi = "10.1063/1.2898214",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "11",

}

TY - JOUR

T1 - High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment

AU - Hsiao, Ching Lien

AU - Liu, Ting Wei

AU - Wu, Chien Ting

AU - Hsu, Hsu Cheng

AU - Hsu, Geng Ming

AU - Chen, Li Chyong

AU - Shiao, Wen Yu

AU - Yang, C. C.

AU - Gällström, Andreas

AU - Holtz, Per Olof

AU - Chen, Chia Chun

AU - Chen, Kuei Hsien

N1 - Funding Information: The authors would like to thank Y. F. Chen of National Taiwan University for his fruitful discussion. This work was financially supported by Ministry of Education and National Science Council in Taiwan as well as the US AFOSR-AOARD. This work was also supported by grants from the Swedish Foundation for Strategic Research (SSF) and the Swedish Foundation for International Cooperation in Research and Higher Education (STINT).

PY - 2008

Y1 - 2008

N2 - High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

AB - High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

UR - https://www.scopus.com/pages/publications/41049098007

UR - https://www.scopus.com/pages/publications/41049098007#tab=citedBy

U2 - 10.1063/1.2898214

DO - 10.1063/1.2898214

M3 - Article

AN - SCOPUS:41049098007

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111914

ER -

High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此