@article{9942ffa261294fccbefcbb1a07a446c8,
title = "High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment",
abstract = "High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors.",
author = "Hsiao, {Ching Lien} and Liu, {Ting Wei} and Wu, {Chien Ting} and Hsu, {Hsu Cheng} and Hsu, {Geng Ming} and Chen, {Li Chyong} and Shiao, {Wen Yu} and Yang, {C. C.} and Andreas G{\"a}llstr{\"o}m and Holtz, {Per Olof} and Chen, {Chia Chun} and Chen, {Kuei Hsien}",
note = "Funding Information: The authors would like to thank Y. F. Chen of National Taiwan University for his fruitful discussion. This work was financially supported by Ministry of Education and National Science Council in Taiwan as well as the US AFOSR-AOARD. This work was also supported by grants from the Swedish Foundation for Strategic Research (SSF) and the Swedish Foundation for International Cooperation in Research and Higher Education (STINT).",
year = "2008",
doi = "10.1063/1.2898214",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}