High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu Chiang Chao; Chin Ho Chung; Hsiao Wen Zan; Hsin Fei Meng; Ming Che Ku

doi:10.1063/1.3668086

High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu Chiang Chao
, Chin Ho Chung
, Hsiao Wen Zan^*
, Hsin Fei Meng
, Ming Che Ku

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO ₃/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 ⁴, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

原文	英語
文章編號	233308
期刊	Applied Physics Letters
卷	99
發行號	23
DOIs	https://doi.org/10.1063/1.3668086
出版狀態	已發佈 - 2011 12月 5
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3668086

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引用此

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title = "High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer",

abstract = "A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 {\texttimes} 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.",

author = "Chao, \{Yu Chiang\} and Chung, \{Chin Ho\} and Zan, \{Hsiao Wen\} and Meng, \{Hsin Fei\} and Ku, \{Ming Che\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC100-2628-M-009-002-.",

year = "2011",

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doi = "10.1063/1.3668086",

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AU - Chao, Yu Chiang

AU - Chung, Chin Ho

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

AU - Ku, Ming Che

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC100-2628-M-009-002-.

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N2 - A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

AB - A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

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JO - Applied Physics Letters

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High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

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