摘要
A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.
原文 | 英語 |
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文章編號 | 233308 |
期刊 | Applied Physics Letters |
卷 | 99 |
發行號 | 23 |
DOIs | |
出版狀態 | 已發佈 - 2011 12月 5 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學(雜項)