TY - GEN
T1 - High performance ultra-low energy RRAM with good retention and endurance
AU - Cheng, C. H.
AU - Tsai, C. Y.
AU - Chin, Albert
AU - Yeh, F. S.
PY - 2010
Y1 - 2010
N2 - High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 10 4 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.
AB - High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 10 4 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.
UR - http://www.scopus.com/inward/record.url?scp=79951815188&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951815188&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2010.5703392
DO - 10.1109/IEDM.2010.5703392
M3 - Conference contribution
AN - SCOPUS:79951815188
SN - 9781424474196
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 19.4.1-19.4.4
BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010
T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010
Y2 - 6 December 2010 through 8 December 2010
ER -