High performance ultra-low energy RRAM with good retention and endurance

C. H. Cheng, C. Y. Tsai, Albert Chin, F. S. Yeh

研究成果: 書貢獻/報告類型會議論文篇章

32 引文 斯高帕斯(Scopus)

摘要

High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 10 4 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.

原文英語
主出版物標題2010 IEEE International Electron Devices Meeting, IEDM 2010
頁面19.4.1-19.4.4
DOIs
出版狀態已發佈 - 2010 十二月 1
事件2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, 美国
持續時間: 2010 十二月 62010 十二月 8

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

其他

其他2010 IEEE International Electron Devices Meeting, IEDM 2010
國家/地區美国
城市San Francisco, CA
期間2010/12/062010/12/08

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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