High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao, Hsin Fei Meng*, Sheng Fu Horng, Chain Shu Hsu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

27 引文 斯高帕斯(Scopus)

摘要

We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

原文英語
頁(從 - 到)310-316
頁數7
期刊Organic Electronics
9
發行號3
DOIs
出版狀態已發佈 - 2008 六月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 生物材料
  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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