TY - JOUR
T1 - High-performance solution-processed polymer space-charge-limited transistor
AU - Chao, Yu Chiang
AU - Meng, Hsin Fei
AU - Horng, Sheng Fu
AU - Hsu, Chain Shu
N1 - Funding Information:
This work is supported by the National Science Council of the Republic of China under Contract No. NSC96-2112-M-009-036.
PY - 2008/6
Y1 - 2008/6
N2 - We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.
AB - We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.
KW - Space-charge-limited current
KW - Vertical transistor
UR - http://www.scopus.com/inward/record.url?scp=41549096466&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=41549096466&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2007.11.012
DO - 10.1016/j.orgel.2007.11.012
M3 - Article
AN - SCOPUS:41549096466
VL - 9
SP - 310
EP - 316
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 3
ER -