High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao; Hsin Fei Meng; Sheng Fu Horng; Chain Shu Hsu

doi:10.1016/j.orgel.2007.11.012

High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao, Hsin Fei Meng^*, Sheng Fu Horng, Chain Shu Hsu

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

28 引文斯高帕斯（Scopus）

摘要

We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 10⁴. The current density is higher than 1 mA/cm².

原文	英語
頁（從 - 到）	310-316
頁數	7
期刊	Organic Electronics
卷	9
發行號	3
DOIs	https://doi.org/10.1016/j.orgel.2007.11.012
出版狀態	已發佈 - 2008 6月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
生物材料
一般化學
凝聚態物理學
材料化學
電氣與電子工程

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10.1016/j.orgel.2007.11.012

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@article{85e9912ea5b04eb7a1f331413978d8cb,

title = "High-performance solution-processed polymer space-charge-limited transistor",

abstract = "We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.",

keywords = "Space-charge-limited current, Vertical transistor",

author = "Chao, {Yu Chiang} and Meng, {Hsin Fei} and Horng, {Sheng Fu} and Hsu, {Chain Shu}",

note = "Funding Information: This work is supported by the National Science Council of the Republic of China under Contract No. NSC96-2112-M-009-036.",

year = "2008",

month = jun,

doi = "10.1016/j.orgel.2007.11.012",

language = "English",

volume = "9",

pages = "310--316",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier BV",

number = "3",

}

TY - JOUR

T1 - High-performance solution-processed polymer space-charge-limited transistor

AU - Chao, Yu Chiang

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

AU - Hsu, Chain Shu

N1 - Funding Information: This work is supported by the National Science Council of the Republic of China under Contract No. NSC96-2112-M-009-036.

PY - 2008/6

Y1 - 2008/6

N2 - We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

AB - We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

KW - Space-charge-limited current

KW - Vertical transistor

UR - http://www.scopus.com/inward/record.url?scp=41549096466&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41549096466&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2007.11.012

DO - 10.1016/j.orgel.2007.11.012

M3 - Article

AN - SCOPUS:41549096466

SN - 1566-1199

VL - 9

SP - 310

EP - 316

JO - Organic Electronics

JF - Organic Electronics

IS - 3

ER -

High-performance solution-processed polymer space-charge-limited transistor

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