High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao, Hsin Fei Meng*, Sheng Fu Horng, Chain Shu Hsu

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    27 引文 斯高帕斯(Scopus)

    摘要

    We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

    原文英語
    頁(從 - 到)310-316
    頁數7
    期刊Organic Electronics
    9
    發行號3
    DOIs
    出版狀態已發佈 - 2008 六月

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 生物材料
    • 化學 (全部)
    • 凝聚態物理學
    • 材料化學
    • 電氣與電子工程

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