High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec-1 swing

Chien Liu, Hsuan Han Chen, Yi Chun Tung, Wei Chun Wang, Zhong Ying Huang, Bing Yang Shih, Szu Yen Hsiung, Shih An Wang, Yu Chi Fan, Tsung Ming Lee, Chien Liang Lin, Zi You Huang, Hsiu Ming Liu, Sheng Lee, Wu Ching Chou, Chun Hu Cheng, Hsiao Hsuan Hsu

研究成果: 雜誌貢獻文章同行評審

摘要

In this work, we demonstrated that the 5-nm-thick HfAlO x negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec-1 subthreshold swing (SS), an ultralow I off of 7.44 fA μm-1, and a high I on /I off ratio of 1.9 108. The NC switching with sub-60 mV dec-1 SS can be implemented from V DS = 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlO x not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlO x NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices.

原文英語
文章編號SGGA01
期刊Japanese Journal of Applied Physics
59
發行號SG
DOIs
出版狀態已發佈 - 2020 四月 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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