High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng; H. C. Pan; S. H. Lin; H. H. Hsu; C. N. Hsiao; C. P. Chou; F. S. Yeh; Albert Chin

doi:10.1149/1.2993977

High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N. Hsiao, C. P. Chou, F. S. Yeh, Albert Chin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-⁸ A cm² at -1 V was obtained for a 18 fFμ m² capacitance density. For a 5.5 fFμ m² capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

原文	英語
頁（從 - 到）	G295-G298
期刊	Journal of the Electrochemical Society
卷	155
發行號	12
DOIs	https://doi.org/10.1149/1.2993977
出版狀態	已發佈 - 2008
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

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abstract = "We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.",

author = "Cheng, {C. H.} and Pan, {H. C.} and Lin, {S. H.} and Hsu, {H. H.} and Hsiao, {C. N.} and Chou, {C. P.} and Yeh, {F. S.} and Albert Chin",

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T1 - High-performance MIM capacitors using a high- κ TiZrO dielectric

AU - Cheng, C. H.

AU - Pan, H. C.

AU - Lin, S. H.

AU - Hsu, H. H.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - Yeh, F. S.

AU - Chin, Albert

PY - 2008

Y1 - 2008

N2 - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

AB - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

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VL - 155

SP - G295-G298

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

High-performance MIM capacitors using a high- κ TiZrO dielectric

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