High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N. Hsiao, C. P. Chou, F. S. Yeh, Albert Chin

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

原文英語
頁(從 - 到)G295-G298
期刊Journal of the Electrochemical Society
155
發行號12
DOIs
出版狀態已發佈 - 2008

ASJC Scopus subject areas

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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