High performance metal/insulator/metal capacitors using HfTiO as dielectric

Hsiao Hsuan Hsu, Chun Hu Cheng, Bing Yue Tsui

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.

原文英語
主出版物標題2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
頁面67-68
頁數2
DOIs
出版狀態已發佈 - 2009
對外發佈Yes
事件2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, 臺灣
持續時間: 2009 四月 272009 四月 29

其他

其他2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
國家臺灣
城市Hsinchu
期間09/4/2709/4/29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • 引用此

    Hsu, H. H., Cheng, C. H., & Tsui, B. Y. (2009). High performance metal/insulator/metal capacitors using HfTiO as dielectric. 於 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (頁 67-68). [5159294] https://doi.org/10.1109/VTSA.2009.5159294