High-performance metal-insulator-metal capacitor using quality properties of high- κ TiPrO dielectric

Chingchien Huang*, Chun Hu Cheng, Ko Tao Lee, Bo Heng Liou

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this paper, we demonstrate excellent material characteristics of TiPrO and high-density Tix Pr1-x O (x≈0.67) metal-insulator-metal (MIM) capacitors using high-work-function (∼5.3 eV) Ir top electrode. Low leakage current of 7× 10-9 A cm2 at -1 V and high 16 fFμ m2 capacitance density are achieved for 400°C anneal TiPrO, which also meets the International Technology Roadmap for Semiconductors goals (at year 2018) of 10 fFμ m2 density and J (CV) <7 fA (pFV). Furthermore, the improved high 20 fFμ m2 capacitance density TiPrO MIM was obtained at a higher anneal temperature, where a low leakage current of 1.2× 10-7 A cm2 was measured at -1 V. These good performances indicate that TiPrO MIM is suitable for analog/radio frequency integrated circuits.

原文英語
頁(從 - 到)G23-G27
期刊Journal of the Electrochemical Society
156
發行號4
DOIs
出版狀態已發佈 - 2009
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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