High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

Yu Ting Huang, Yi Hsun Chen, Yi Ju Ho, Shih Wei Huang, Yih Ren Chang, Kenji Watanabe, Takashi Taniguchi, Hsiang Chih Chiu, Chi Te Liang, Raman Sankar, Fang Cheng Chou, Chun Wei Chen*, Wei Hua Wang


研究成果: 雜誌貢獻期刊論文同行評審

28 引文 斯高帕斯(Scopus)


The electrical contact to two-dimensional (2D) semiconductor materials is decisive to the electronic performance of 2D semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, Ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that a nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by Ohmic contact behavior at T = 2 K and a low barrier height, B = 50 meV. This Ohmic contact enables demonstration of an on-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3700 and 1000 cm2/V·s is achieved with the two-terminal In-InSe FEDs at T = 2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D semiconductor-based electronics.

頁(從 - 到)33450-33456
期刊ACS Applied Materials and Interfaces
出版狀態已發佈 - 2018 10月 3

ASJC Scopus subject areas

  • 材料科學(全部)


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