TY - JOUR
T1 - High performance IGZO/TiO2 thin film transistors using Y 2O3 buffer layers on polycarbonate substrate
AU - Hsu, H. H.
AU - Chang, C. Y.
AU - Cheng, C. H.
PY - 2013/9
Y1 - 2013/9
N2 - In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.
AB - In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.
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U2 - 10.1007/s00339-013-7680-9
DO - 10.1007/s00339-013-7680-9
M3 - Article
AN - SCOPUS:84881543829
SN - 0947-8396
VL - 112
SP - 817
EP - 820
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 4
ER -