High performance IGZO/TiO2 thin film transistors using Y 2O3 buffer layers on polycarbonate substrate

H. H. Hsu, C. Y. Chang, C. H. Cheng*


研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)


In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.

頁(從 - 到)817-820
期刊Applied Physics A: Materials Science and Processing
出版狀態已發佈 - 2013 九月

ASJC Scopus subject areas

  • 化學 (全部)
  • 材料科學(全部)


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