High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics

W. B. Chen; C. H. Cheng; Albert Chin

doi:10.1109/TED.2010.2079270

High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO ₃ gate dielectrics

W. B. Chen
, C. H. Cheng
, Albert Chin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm²/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10^-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO₃ dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.

原文	英語
文章編號	5598525
頁（從 - 到）	3525-3530
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	57
發行號	12
DOIs	https://doi.org/10.1109/TED.2010.2079270
出版狀態	已發佈 - 2010 12月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2010.2079270

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@article{2c5c62641fee4d148f1df6c1f3d38a3e,

title = "High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics",

abstract = "This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 {\texttimes} 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.",

keywords = "Equivalent oxide thickness (EOT), Ge, LaAlO, TaN, high-κ, n-MOSFETs",

author = "Chen, \{W. B.\} and Cheng, \{C. H.\} and Albert Chin",

note = "Funding Information: Manuscript received February 4, 2010; revised June 4, 2010; accepted September 10, 2010. Date of publication October 11, 2010; date of current version November 19, 2010. This work was supported in part by the National Nano Project of the National Science Council of Taiwan. The review of this brief was arranged by Editor J. Woo.",

year = "2010",

month = dec,

doi = "10.1109/TED.2010.2079270",

language = "English",

volume = "57",

pages = "3525--3530",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics

AU - Chen, W. B.

AU - Cheng, C. H.

AU - Chin, Albert

N1 - Funding Information: Manuscript received February 4, 2010; revised June 4, 2010; accepted September 10, 2010. Date of publication October 11, 2010; date of current version November 19, 2010. This work was supported in part by the National Nano Project of the National Science Council of Taiwan. The review of this brief was arranged by Editor J. Woo.

PY - 2010/12

Y1 - 2010/12

N2 - This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.

AB - This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.

KW - Equivalent oxide thickness (EOT)

KW - Ge

KW - LaAlO

KW - TaN

KW - high-κ

KW - n-MOSFETs

UR - https://www.scopus.com/pages/publications/78650023925

UR - https://www.scopus.com/pages/publications/78650023925#tab=citedBy

U2 - 10.1109/TED.2010.2079270

DO - 10.1109/TED.2010.2079270

M3 - Article

AN - SCOPUS:78650023925

SN - 0018-9383

VL - 57

SP - 3525

EP - 3530

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 5598525

ER -

High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics

摘要

ASJC Scopus subject areas

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High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO ₃ gate dielectrics